发明名称 Aluminum nitride sintered bodies and members for semiconductor-producing apparatuses
摘要 An aluminum nitride sintered body contains aluminum nitride as a main component, at least one rare earth metal element in an amount of not less than 0.4 mol % and not more than 2.0 mol % as calculated in the form of an oxide thereof and aluminum oxide component in an amount of not less than 0.5 mol % and not more than 2.0 mol %. Si content of the sintered body is not more than 80 ppm and an average particle diameter of aluminum nitride grains is not more than 3 mum. The aluminum nitride sintered body hardly peels aluminum nitride grains and exhibits high resistivity of at least 10<8 >Omega.cm even in a high temperature range of, for example, 300-500° C., as well as relatively high thermal conductivity.
申请公布号 US6800576(B2) 申请公布日期 2004.10.05
申请号 US20010020499 申请日期 2001.12.14
申请人 NGK INSULATORS, LTD. 发明人 KATSUDA YUJI;TSURUTA HIDEYOSHI
分类号 H01L21/683;H01L23/15;(IPC1-7):C04B35/581 主分类号 H01L21/683
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