Method for fabricating semiconductor device with storage node contact structure

摘要

The present invention is related to a method for fabricating a semiconductor device capable of preventing a bit line pattern from being attacked during a storage node contact hole formation. The method includes the steps of: forming a bit line insulation layer on a substrate structure having a plurality of plugs; forming a group of trenches exposing a group of the plugs by etching the bit line insulation layer; burying each trench by a conductive material to form a bit line electrically connected to the exposed plug; isolating the bit line by performing a chemical mechanical polishing process until the bit line insulation layer is exposed; forming an inter-layer insulation layer on the above structure including the bit line; and etching selectively the inter-layer insulation layer and the bit line insulation layer to form storage node contact holes exposing another group of the plugs.