发明名称 |
Formation of patterned silicon-on-insulator (SOI)/silicon-on-nothing (SON) composite structure by porous Si engineering |
摘要 |
A patterned SOI/SON composite structure and methods of forming the same are provided. In the SOI/SON composite structure, the patterned SOI/SON structures are sandwiched between a Si over-layer and a semiconductor substrate. The method of forming the patterned SOI/SON composite structure includes shared processing steps wherein the SOI and SON structure are formed together. The present invention also provides a method of forming a composite structure which includes buried conductive/SON structures as well as a method of forming a composite structure including only buried void planes.
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申请公布号 |
US6800518(B2) |
申请公布日期 |
2004.10.05 |
申请号 |
US20020334220 |
申请日期 |
2002.12.30 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BENDERNAGEL ROBERT E.;CHOE KWANG SU;DAVARI BIJAN;FOGEL KEITH E.;SADANA DEVENDRA K.;SHAHIDI GHAVAM G.;TIWARI SANDIP |
分类号 |
H01L21/324;H01L21/762;(IPC1-7):H01L31/823 |
主分类号 |
H01L21/324 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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