发明名称 CMOS integration sensor with fully differential column readout circuit for light adaptive imaging
摘要 An imager that is better suited for low-light detection capability. In accordance with a preferred embodiment, the imager may be easily configured to provide an imager having multi-resolution capability where SNR can be adjusted for optimum low-level detectibility. Multi-resolution signal processing functionality is provided on-chip to achieve high speed imaging, as well as low power consumption. The imager architecture employs an improved pixel binning approach with fully differential circuits situated so that all extraneous and pick-up noise is eliminated. The current implementation requires no frame transfer memory, thereby reducing chip size. The reduction in area enables larger area format light adaptive imager implementations.
申请公布号 US6801258(B1) 申请公布日期 2004.10.05
申请号 US19990268879 申请日期 1999.03.16
申请人 CALIFORNIA INSTITUTE OF TECHNOLOGY 发明人 PAIN BEDABRATA;ZHOU ZHIMIN;FOSSUM ERIC R.
分类号 H04N5/343;H04N5/363;H04N5/365;H04N5/374;H04N5/378;(IPC1-7):H04N5/335;H01L27/00 主分类号 H04N5/343
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