Silicon wafer and method for manufacture thereof, and method for evaluation of silicon wafer

摘要

A method for producing a silicon ingot through pulling up a silicon single crystal according to the Czochralski method, wherein the silicon single crystal is pulled up while being doped with nitrogen in such a condition as to form a part having a nitrogen content of 5x10<13 >atoms/cm<3 >to 1x10<15 >atoms/cm<3>. A silicon wafer having a nitrogen content of 5x10<13 >atoms/cm<3 >to 1x10<15 >atoms/cm<3 >which is suitable for being treated with heat in a non-oxidizing atmosphere is manufactured of an ingot produced by using the method. The method can be used for producing a silicon wafer being doped with nitrogen and having satisfactory characteristics for use in a semiconductor device.