发明名称 |
ZnO/sapphire substrate and method for manufacturing the same |
摘要 |
A ZnO/sapphire substrate includes an R-plane sapphire substrate whose (0 1-1 2) planes are parallel to the surface thereof and a ZnO epitaxial film formed on the R-plane sapphire substrate. The (1 1-2 0) planes of the ZnO epitaxial film are disposed with an interplanar spacing in the range of about 1.623 to 1.627 Å parallel to the (0 1-1 2) planes of the R-plane sapphire substrate.
|
申请公布号 |
US6800135(B2) |
申请公布日期 |
2004.10.05 |
申请号 |
US20020171631 |
申请日期 |
2002.06.17 |
申请人 |
MURATA MANUFACTURING CO., LTD. |
发明人 |
KOIKE JUN;IEKI HIDEHARU |
分类号 |
C30B29/16;C23C14/08;C30B23/02;H03H9/02;H03H9/25;(IPC1-7):C30B23/02;C30B25/18;C01B13/00 |
主分类号 |
C30B29/16 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|