发明名称 |
Chemical amplification type photoresist composition, method for producing a semiconductor device using the composition, and semiconductor substrate |
摘要 |
To provide a chemical amplification type positive photoresist composition suited to resist patterning of a substrate presenting surface step differences, a method for manufacturing the semiconductor device employing this composition, and a semiconductor substrate. In a method for manufacturing a semiconductor device, a resist film is formed using a chemical amplification type positive photoresist composition, comprised of a base resin and a basic compound added to the base resin at a rate of 1 to 100 mmol to 100 g of the base resin, on a substrate halving surface step differences and into which the organic removing solution is deposited or oozed, and a predetermined area of the resist film is exposed to light to form a resist pattern.
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申请公布号 |
US6800551(B2) |
申请公布日期 |
2004.10.05 |
申请号 |
US20020308115 |
申请日期 |
2002.12.03 |
申请人 |
NEC ELECTRONICS CORPORATION;SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
NAGAHARA SEIJI;SAKURADA TOYOHISA;YOSHIHARA TAKAO |
分类号 |
G03F7/004;G03F7/039;G03F7/38;H01L21/027;H01L21/312;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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