发明名称 |
Phase-shifting mask and method of forming pattern using the same |
摘要 |
A phase-shifting mask suppresses increase of the minimum pattern-element size due to optical proximity effect. The mask has a first pattern region formed on a transparent substrate, including a first blocking part for forming at least one first pattern element. The mask further includes a second pattern region on the substrate, including second blocking parts forming second pattern elements arranged periodically. The first pattern region includes first phase-shifting and transparent parts. The second pattern region includes second phase-shifting and transparent parts. The intensity of exposing light through the first pattern region is set to be approximately equal to that of the light through the second pattern region. A third blocking part surrounds the first phase-shifting and transparent parts. A fourth blocking part surrounds the second phase-shifting and transparent parts. |
申请公布号 |
US6800402(B2) |
申请公布日期 |
2004.10.05 |
申请号 |
US20020061283 |
申请日期 |
2002.02.04 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
FUJIMOTO MASASHI |
分类号 |
G03F1/08;G03F1/00;G03F1/30;G03F1/34;G03F1/36;G03F1/70;H01L21/027;(IPC1-7):G03F9/00 |
主分类号 |
G03F1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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