发明名称 |
Method for correcting characteristics of attenuated phase-shift mask |
摘要 |
A method for correcting characteristics of an attenuated phase-shift mask having an attenuated layer including (a) storing a data in a memory, which shows a correlation between characteristics and process conditions, (b) measuring the characteristics of the attenuated phase-shift mask, (c) calculating a appropriate process condition from the result of the step (b) and the data stored in the memory; and (d) soaking the attenuated phase-shift mask into a liquid solution for a certain time-that is calculated in the step (c) to change thickness and composition of the attenuated layer. |
申请公布号 |
US6800214(B2) |
申请公布日期 |
2004.10.05 |
申请号 |
US20020300777 |
申请日期 |
2002.11.21 |
申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
TAKUSHIMA KATSUHIRO |
分类号 |
H01L21/027;G03F1/00;G03F1/08;G03F1/32;G03F1/68;G03F1/84;G03F7/40;(IPC1-7):B44C1/22 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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