发明名称 Method for correcting characteristics of attenuated phase-shift mask
摘要 A method for correcting characteristics of an attenuated phase-shift mask having an attenuated layer including (a) storing a data in a memory, which shows a correlation between characteristics and process conditions, (b) measuring the characteristics of the attenuated phase-shift mask, (c) calculating a appropriate process condition from the result of the step (b) and the data stored in the memory; and (d) soaking the attenuated phase-shift mask into a liquid solution for a certain time-that is calculated in the step (c) to change thickness and composition of the attenuated layer.
申请公布号 US6800214(B2) 申请公布日期 2004.10.05
申请号 US20020300777 申请日期 2002.11.21
申请人 OKI ELECTRIC INDUSTRY CO., LTD. 发明人 TAKUSHIMA KATSUHIRO
分类号 H01L21/027;G03F1/00;G03F1/08;G03F1/32;G03F1/68;G03F1/84;G03F7/40;(IPC1-7):B44C1/22 主分类号 H01L21/027
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