RuSixOy-containing adhesion layers

摘要

Integrated circuit structures having a substrate assembly that includes at least one active device and a silicon-containing region are disclosed. The integrated circuit structure includes an interconnect formed relative to the at least one active device and the silicon-containing region. The interconnect includes an adhesion layer on the silicon-containing region. The adhesion layer is formed of RuSixOy, where x and y are in a range of about 0.01 to about 10.