| 发明名称 |
Semiconductor device having an insulated gate and a fabrication process thereof |
| 摘要 |
A semiconductor device includes a T-shaped gate on a gate insulation film, wherein the T-shaped gate includes a lower polycrystal layer containing Si and Ge and an upper polycrystal layer of polysilicon.
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| 申请公布号 |
US6800536(B2) |
申请公布日期 |
2004.10.05 |
| 申请号 |
US20030442224 |
申请日期 |
2003.05.21 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
KURATA HAJIME |
| 分类号 |
H01L21/28;H01L21/336;H01L21/8238;H01L27/092;H01L29/423;H01L29/78;H01L29/786;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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