| 摘要 |
The invention relates to a doped or undoped zinc oxide layer (9a, 9b, 9c) and to a method for the production thereof by chemical vapor deposition onto a substrate (10a, 10b, 10c). One of the surfaces (atomic level), which has the lowest surface energy, is grown in a manner that is surface parallel with regard to the geometry of the substrate when the substrate has a higher surface energy than that of the ZnO (0001) crystal surface and/or when the process parameters are set so that a 2D lateral layer growth can be realized. |
