| 摘要 |
A thin film capacitor with an arbitrary temperature coefficient of capacitance can be obtained by using only two kinds of dielectric thin film capacitor, wherein the dielectric thin film (3) having a prescribed temperature coefficient of capacitance is formed on the surface of a lower electrode (2) formed on a substrate (1), a second dielectric film (4) having a different temperature coefficient of capacitance from the temperature coefficient of capacitance of the prescribed temperature coefficient of capacitance is formed so as to cover from the upper edge of the dielectric thin film to the step portion of the dielectric thin film, and an upper electrode (5) is formed so as to cover the dielectric thin film and second dielectric film, and wherein the temperature coefficient of capacitance is determined by adjusting the overlap area of the lower electrode and upper electrode between the lower electrode and upper electrode. <IMAGE>
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