| 摘要 |
PURPOSE: A field emission device fabrication method is provided to increase reliability of a device by preventing a damage due to the etching of a common line. CONSTITUTION: A field emission device fabrication method comprises a step of forming a bottom electrode, a step of forming a bottom electrode common line(25) for connecting the bottom electrode with a conducting material having a high etching selectivity, a step of forming insulating films by achieving an anodizing through the bottom electrode common line and forming a device, and a step of removing by etching selectively the bottom electrode common line after forming all insulating films through the anodizing. The bottom electrode is formed with aluminum, the bottom electrode common line is formed with tungsten and is etched with an etching solution mixed with an ammonium hydroxide and a hydrogen peroxide.
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