| 摘要 |
PURPOSE: An uncooled infrared sensor with 2-layer structure and its manufacturing method are provided obtain an absorption ratio above 95% at a central wavelength band of an infrared sensor by constructing the infrared sensor with 2-layer structure. CONSTITUTION: An uncooled infrared sensor with 2-layer structure includes a read out IC substrate(1) and a reflective metal layer(2) formed on the read out IC substrate(1). At least one anchor(3) is formed on an upper portion of the read out IC substrate(1). A first insulating layer(4) is interposed between the reflective metal layer(2) and an air gap while being supported by means of the anchor(3). A thermal conductive wire(5) is patterned on the first insulating layer(4). A second insulating layer(6) is formed on the first insulating layer(4). An absorption layer(7) is formed on the second insulating layer(6). |
