| 摘要 |
PROBLEM TO BE SOLVED: To improve the detecting accuracy of a registration mark while suppressing the complicating of a manufacturing process when a level difference is eliminated by a flattening process. SOLUTION: The semiconductor substrate is provided with a metallic wiring layer formed on the same through a flattening film and a registration mark formed by engraving the semiconductor substrate up to a depth to leave the level difference of the metallic wiring layer. A groove 2 having a depth D not less than 10μm deep, for example, is formed on the silicon substrate 1, and the level difference 15 of an Al film 14 formed while coping with the groove 2 is utilized as the registration mark upon forming the Al wiring layer 14'. COPYRIGHT: (C)2004,JPO&NCIPI |
