发明名称 |
METHOD OF FORMING REFRACTORY METAL CONTACT IN AN OPENING, AND RESULTING STRUCTURE |
摘要 |
A structure which ensures against deterioration of an underlying silicide layer over which a refractory material layer is deposited by physical vapor deposition (PVD) or chemical vapor deposition (CVD) is realized by first providing a continuous polysilicon layer prior to the refractory material deposition. The continuous polysilicon layer, preferably no thicker than 50 Å, serves a sacrificial purpose and prevents damage to an underlying silicide layer by blocking interaction between any fluorine and the underlying silicide that is released when the refractory material is formed.
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申请公布号 |
US2004191562(A1) |
申请公布日期 |
2004.09.30 |
申请号 |
US20040709174 |
申请日期 |
2004.04.19 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHAPPLE-SOKOL JONATHAN;MANN RANDY;MURPHY WILLIAM;RANKIN JED;VANSLETTE DANIEL |
分类号 |
C23C28/00;(IPC1-7):H01L21/476 |
主分类号 |
C23C28/00 |
代理机构 |
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地址 |
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