| 摘要 |
PURPOSE: A method for manufacturing a CMOS(Complementary Metal Oxide Semiconductor) transistor is provided to be capable of obtaining multi-threshold voltage without using an additional mask. CONSTITUTION: An isolation layer(104) is formed in a silicon substrate(102). The first wells(124a,124b) are formed by implanting first-type dopants using the first photoresist pattern as a mask. The second wells(125a,125b) are formed by implanting second-type dopants using the third photoresist pattern as a mask. At this time, one of the second wells is enclosed by the first well(124a) and the other of the second wells is formed between the first wells. A gate oxide layer(126) and a gate electrode(128) are sequentially formed on the resultant structure. A low concentration source/drain region(130) is formed at one side of the gate electrode. After forming a spacer(132) at both sidewalls of the gate electrode, a high concentration source/drain is formed at the other side of the gate electrode.
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