发明名称 |
A METHOD OF FORMING AN ELEMENT OF A MICROELECTRONIC CIRCUIT |
摘要 |
A method is described for forming an element of a microelectronic circuit. A sacrificial layer is formed on an upper surface of a support layer. The sacrificial layer is extremely thin and uniform. A height-defining layer is then formed on the sacrificial layer, whereafter the sacrificial layer is etched away so that a well-defined gap is left between an upper surface of the support layer and a lower surface of the height-defining layer. A monocrystalline semiconductor material is then selectively grown from a nucleation silicon site through the gap. The monocrystalline semiconductor material forms a monocrystalline layer having a thickness corresponding to the thickness of the original sacrificial layer. |
申请公布号 |
AU2003297950(A1) |
申请公布日期 |
2004.09.30 |
申请号 |
AU20030297950 |
申请日期 |
2003.12.15 |
申请人 |
INTEL CORPORATION |
发明人 |
ANAND MURTHY;ROBERT CHAU;BRIAN DOYLE |
分类号 |
H01L21/20;H01L29/12;H01S5/34;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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