| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a gallium nitride crystal substrate, which is a simple method and by which a self-standing substrate of a gallium nitride single crystal having a low defect density and almost free from impurity contamination can be obtained in a good yield. <P>SOLUTION: The method for manufacturing the gallium nitride crystal substrate includes a step for depositing a metal film or a metal nitride film on a starting substrate selected from a single crystal sapphire substrate, a substrate obtained by growing a single crystal gallium nitride film on the sapphire substrate and a single crystal semiconductor substrate, a step for depositing a gallium nitride film on the metal film or the metal nitride film, and a step for obtaining a self-standing gallium nitride substrate by peeling the starting substrate from the substrate on which the gallium nitride film is deposited by selectively heating the metal film or the metal nitride film by irradiating the substrate, on which the gallium nitride film is deposited, with microwaves. <P>COPYRIGHT: (C)2004,JPO&NCIPI |
