| 摘要 |
PROBLEM TO BE SOLVED: To provide a pattern forming method using a thermal flow process to improve the size accuracy in a resist pattern forming process. SOLUTION: The pattern forming method comprises the resist pattern forming processes (S01 to S06) in which a reflection preventing film and a resist film are formed on a substrate to be processed and a resist pattern is formed by conducting pattern exposure, baking and developing process to the resist film, a monitor pattern measuring process (S07) for measuring a size of the predetermined monitor pattern after formation of the resist pattern, and the resist pattern deforming processes (S08 to S13) in which the resist pattern is deformed to be specified in the predetermined size by controlling the conditions for heat treatment of the resist pattern based on the information obtained by monitor pattern measurement. COPYRIGHT: (C)2004,JPO&NCIPI
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