| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique by which a notch in a desired shape can be formed on the flank of a gate electrode. SOLUTION: On a semiconductor substrate 1, a gate insulating film 4, polysilicon films 5 and 7, and a silicon nitride film 9 are laminated in this order. The polysilicon films both contain phosphorus and the polysilicon film 5 has an area which is high in phosphorus concentration than the polysilicon film 7. Then the polysilicon films 5 and 7 and silicon nitride film 8 are partially etched to form gate electrodes 10n, 10p, 40n, and 40p on the gate insulating film 4. At this time, the polysilicon film 5 is etched faster in the area, higher in phosphorus concentration than the polysilicon film 7, than the polysilicon film 7, so notches are formed at bottom parts of flanks of the gate electrodes 10p, 40n, and 40p. COPYRIGHT: (C)2004,JPO&NCIPI
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