| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which can reduce the degree of formation of a CVD film through contact of the processing gas with the inner wall surface of the side of an inner tube during deposition of the CVD film on a wafer. SOLUTION: The substrate processing apparatus is provided with a gas introducing part located at the external circumference of a side part of the inner tube, a gas passage located within the side part, and a plurality of gas injection ports located on the inner surface of the side part. The gas introducing part, gas passage, and gas injection ports are formed to be communicated in turn. An inert gas is supplied from the gas introducing part and the inert gas is caused to rise upward along the area near the inner surface of the side part of the inner tube to prevent accumulation of a CVD film in the inner tube. COPYRIGHT: (C)2004,JPO&NCIPI
|
