Strained-channel isolated-gate field effect transistor, process for making same and resulting integrated circuit

摘要

A transistor is located on a base layer 1 resting on a semiconductor substrate SB and formed from a relaxed silicon-germanium layer, and includes, under the isolated gate 7, a first strained silicon layer 2 resting on the base layer 1, surmounted by a buried insulating layer 10, surmounted by a second strained silicon layer 4 extending between the source S and drain D regions.