| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a drain pump for a flush memory without any wasteful current consumption by making the voltage to be supplied to a memory cell variable according to the number of memory cells. <P>SOLUTION: The drain pump is equipped with: a means for forming the variable voltages according to the number of the bits to be programmed; a pump for pumping the inputted voltage; and a regulator for regulating the output voltage of the pump according to the variable voltages and outputting the same. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
