| 摘要 |
PROBLEM TO BE SOLVED: To prevent the generation of small pieces of metal foil, raised up from the metal terminal of a TEG upon cutting a scribe region, in which the TEG is formed, by a rotary blade. SOLUTION: The manufacturing method of a semiconductor device comprises a first protecting layer forming process for covering the surface of a wafer 1 by a first protective film 5 consisting of an inorganic material, a testing process while exposing the metallic parts 31, 32 of the semiconductor device (TEG) 3 for testing, which is formed in a region comprising cutting lines for partitioning the wafer into chips, and a cutting process for forming cutting grooves along the cutting lines by the rotary blade. In such a manufacturing method, the testing is effected while exposing the metallic parts of the semiconductor device for testing after the first protective layer forming process, then, the metallic parts of the semiconductor device for testing are covered by a second protective film 6 consisting of a synthetic resin and the cutting process is carried out under this condition. COPYRIGHT: (C)2004,JPO&NCIPI |
