发明名称 FIELD EFFECT TRANSISTOR SUBSTRATE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To control the electric field at a near-by region including a signal waveguide formed between channel electrodes in a higher order in a field effect type electronic device. SOLUTION: A source electrode 13 and a drain electrode 14 that are arranged opposingly are provided on a silicon oxide layer 12 formed on a silicon substrate 11. Then, a pair of gate electrodes 15-1 and 15-2 is opposingly provided at both the sides of a region S for composing a signal waveguide formed between the source electrode 13 and the drain electrode 14. Additionally, pairs of electric field control electrodes 17-1, 17-2, and 18-1, 18-2 are provided so that both the sides of the region S and the gates 15-1, 15-2 are sandwiched. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004273627(A) 申请公布日期 2004.09.30
申请号 JP20030060124 申请日期 2003.03.06
申请人 UNIV OSAKA 发明人 KAWAI TOMOJI;TABATA HITOSHI;ROKUTA EIJI;TANIGUCHI MASATERU;MATSUI SHINJI
分类号 H01L29/80;(IPC1-7):H01L29/80 主分类号 H01L29/80
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