SEMICONDUCTOR INTEGRATED ELEMENT AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To integrate a semiconductor element by introducing an element isolating structure ensuring excellent insulation characteristic. SOLUTION: The semiconductor integrated element 80 integrates, on a GaAs substrate 82, a plurality of first semiconductor elements 84, and second semiconductor elements 86 formed by lamination over the element 84A. An Al oxide layer (AlOx) 88 in the thickness of 40 nm is individually provided between the GaAs substrate and the first semiconductor elements 84A, 84B. An Al oxide layer 90 in the thickness of 40 nm is provided between the first semiconductor element 84A and the second semiconductor element 86. The Al oxide layer 88 and Al oxide layer 90 are formed by the vapor oxidation of the AlAs layer. Since the Al oxide layer 88 is provided, the first semiconductor elements 84A, 84B are electrically isolated with each other like the semiconductor elements as if these were provided on an oxide insulating film. Moreover, since the Al oxide layer 90 is provided, the first semiconductor element 84A and the second semiconductor element 86 are also electrically isolated with each other. COPYRIGHT: (C)2004,JPO&NCIPI