摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a dense translucent Y<SB>2</SB>O<SB>3</SB>sintered compact with a simple operation without necessitating a specific sintering vessel or a Y<SB>2</SB>O<SB>3</SB>packing powder. SOLUTION: The Y<SB>2</SB>O<SB>3</SB>sintered compact is manufactured by a process for forming a Y<SB>2</SB>O<SB>3</SB>raw material having≥99 wt.% purity and≤2μm average particle diameter and a process for sintering the resultant formed body at 1,710-1,850°C under a hydrogen atmosphere to form Y<SB>2</SB>O<SB>3</SB>crystal having 10-800μm average crystal grain diameter. In this manner, the high purity, dense and excellent mechanical strength sintered compact suitable for a semiconductor treatment apparatus, particularly a treatment apparatus using plasma is provided. COPYRIGHT: (C)2004,JPO&NCIPI
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