发明名称 MAGNETRON SPUTTERING MECHANISM AND METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a magnetron sputtering apparatus capable of enhancing the efficiency of target use and desired in-plane film thickness distribution of a substrate by the optimum magnetic field. SOLUTION: A magnetic pole device of the magnetron sputtering apparatus comprises an annular magnetic pole and a center magnetic pole disposed inside the annular magnetic pole, and more specifically, any one or both of the structures are variably adjusted; (1) the structure in which the shape and intensity of the magnetic field can be changed by eccentrically disposing the center magnetic pole from the center of the annular magnetic pole, and arbitrarily adjusting the distance of eccentricity, and (2) the structure in which the intensity of the magnetic field required for the magnetron discharge can be adjusted by installing a ferromagnetic plate in the direction of a cathode center part from the center magnetic pole, and changing the thickness thereof. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004269952(A) 申请公布日期 2004.09.30
申请号 JP20030061414 申请日期 2003.03.07
申请人 SHOWA SHINKU:KK 发明人 AOKI ICHIRO
分类号 C23C14/35;(IPC1-7):C23C14/35 主分类号 C23C14/35
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