发明名称 |
Semiconductor device having bit-line contacts, and method of manufacturing the same |
摘要 |
In a cell-array region, bit-line contacts are self-aligned between the gate electrodes of adjacent gate transistors, with a first side insulating film interposed between each bit-line contact and the gate electrode of one transfer transistor. One end of each bit-line contact directly contacts the drain region of the transfer electrode.
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申请公布号 |
US2004188773(A1) |
申请公布日期 |
2004.09.30 |
申请号 |
US20040786442 |
申请日期 |
2004.02.25 |
申请人 |
KIDOH MASARU;KATSUMATA RYOTA;AOCHI HIDEAKI;MORIKADO MUTSUO;KITO MASARU |
发明人 |
KIDOH MASARU;KATSUMATA RYOTA;AOCHI HIDEAKI;MORIKADO MUTSUO;KITO MASARU |
分类号 |
H01L21/8242;H01L27/108;H01L29/76;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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