发明名称 Semiconductor device having bit-line contacts, and method of manufacturing the same
摘要 In a cell-array region, bit-line contacts are self-aligned between the gate electrodes of adjacent gate transistors, with a first side insulating film interposed between each bit-line contact and the gate electrode of one transfer transistor. One end of each bit-line contact directly contacts the drain region of the transfer electrode.
申请公布号 US2004188773(A1) 申请公布日期 2004.09.30
申请号 US20040786442 申请日期 2004.02.25
申请人 KIDOH MASARU;KATSUMATA RYOTA;AOCHI HIDEAKI;MORIKADO MUTSUO;KITO MASARU 发明人 KIDOH MASARU;KATSUMATA RYOTA;AOCHI HIDEAKI;MORIKADO MUTSUO;KITO MASARU
分类号 H01L21/8242;H01L27/108;H01L29/76;(IPC1-7):H01L29/76 主分类号 H01L21/8242
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