| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of micromachining re-interconnect line precisely and easily, and to provide its fabricating process. <P>SOLUTION: The process for fabricating a semiconductor device comprises a step for forming interconnect lines 9a and 9b on a semiconductor substrate 1, a step for forming a passivation film 10 on the interconnect lines, a step for forming a first insulating film 11 on the passivation film, a step for forming a trench of re-interconnect line in the first insulating film, a step for forming an conductive layer in the trench of re-interconnect line and on the first insulating film, and a step for forming a re-interconnect line 15 of the conductive layer buried in the trench of re-interconnect line and a contact hole by removing the conductive layer existing on the first insulating film by CMP. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p> |
