发明名称 RETICLE MANUFACTURING METHOD, RETICLE, AND CHARGED PARTICLE BEAM EXPOSURE METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a stencil reticle manufacturing method which is capable of ensuring a stitching margin through a comparatively easy method and improving a pattern connection accuracy and to provide others. <P>SOLUTION: When CAD data on segment patterns 101A and 101B which are complementarily divided are provided, the CAD data are divided into primary data and secondary data. The primary data represent a primary pattern 110 which is shorter from each pattern by a certain length from the actual end of the pattern, and the secondary data represent a secondary pattern 120 that is the portion shortened from the pattern. In an electron beam lithographic device, the primary pattern is drawn on beam conditions under which a normal pattern is formed, and the secondary pattern is drawn by defocusing the beam to a prescribed amount. With this setup, the image 120' of the secondary pattern 120 is drawn defocused as a whole, and is formed into a pencil-shaped pattern. Therefore, a pencil-shaped pattern can be formed through a comparatively easy work without increasing the volume of CAD data so much. <P>COPYRIGHT: (C)2004,JPO&NCIPI</p>
申请公布号 JP2004273526(A) 申请公布日期 2004.09.30
申请号 JP20030058501 申请日期 2003.03.05
申请人 NIKON CORP 发明人 SHIMIZU SUMUTO
分类号 G03F1/20;G03F1/68;G03F7/20;H01L21/027;(IPC1-7):H01L21/027;G03F1/16 主分类号 G03F1/20
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