MASK FOR CHARGED PARTICLE BEAM EXPOSURE, CHARGED PARTICLE BEAM EXPOSURE METHOD USING THE SAME, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE USING THE EXPOSURE METHOD

摘要

PROBLEM TO BE SOLVED: To relieve the pattern position distortion without preparing the auxiliary pattern with an aspect ratio higher than a pattern to be used for exposure and decreasing the resolution due to Coulomb effect.

SOLUTION: A mask for a charged particle beam exposure is provided with patterns 2 formed on a mask substrate 1 as through holes. A tensile stress is applied to the mask substrate 1 and auxiliary patterns 3 are formed at a part of low density of the patterns 2 of the mask substrate 1 as through holes formed obliquely to the surface of the mask substrate 1.

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