发明名称 HIGH-POWER PULSED MAGNETRON SPUTTERING
摘要 Magnetically enhanced sputtering methods and apparatus are described. A magnetically enhanced sputtering source according to the present invention includes an anode and a cathode assembly having a target that is positioned adjacent to the anode. An ionization source generates a weakly-ionized plasma proximate to the anode and the cathode assembly. A magnet is positioned to generate a magnetic field proximate to the weakly-ionized plasma. The magnetic field substantially traps electrons in the weakly-ionized plasma proximate to the sputtering target. A power supply produces an electric field between the anode and the cathode assembly. The electric field generates excited atoms in the weekly ionized plasma and generates secondary electrons from the sputtering target. The secondary electrons ionize the excited atoms, thereby creating a strongly-ionized plasma having ions that impact a surface of the sputtering target to generate sputtering flux.
申请公布号 WO2004031435(A3) 申请公布日期 2004.09.30
申请号 WO2003US30427 申请日期 2003.09.26
申请人 ZOND, INC.;CHISTYAKOV, ROMAN 发明人 CHISTYAKOV, ROMAN
分类号 C23C14/35;H01J37/32;H01J37/34 主分类号 C23C14/35
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