发明名称 PHOTODIODE ARRAY, ITS MANUFACTURING METHOD, AND RADIATION DETECTOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a photodiode array, a method of manufacturing the array, and a radiation detector in which the occurrence of a noise due to the damage of a photodetecting section at mounting time can be prevented. <P>SOLUTION: In the photodiode array 1, in which a plurality of photodiodes 4 is formed in an array-like state on the surface of an n-type silicon substrate 3 to which light to be detected is made incident and through wiring 8 is formed for the photodiodes 4 through the substrate 3 from the incident surface side to the rear surface side, recessed sections 6 which are more depressed than the nonforming areas of the photodiodes 4 and have prescribed depths are provided on the incident surface side and the photodiodes 4 are provided in the recessed sections 6. <P>COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004273833(A) 申请公布日期 2004.09.30
申请号 JP20030063708 申请日期 2003.03.10
申请人 HAMAMATSU PHOTONICS KK 发明人 SHIBAYAMA KATSUMI
分类号 G01T1/20;H01L27/14;H01L27/146;H01L31/0352;H01L31/09;H01L31/10;H01L31/102;H04N5/32 主分类号 G01T1/20
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