发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR ELECTRONIC COMPONENT, AND SEMICONDUCTOR ELECTRONIC COMPONENT
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device which can manufacture thin film semiconductor devices in a high manufacturing yield. SOLUTION: The method of manufacturing semiconductor device includes a process (a) to form a resin layer showing a first adhesive force to a semiconductor wafer by filling the surface provided with convex portions for soldering of the semiconductor wafer including the convex portions for soldering at the upper side of the semiconductor substrate, a process (b) to adhere a rear-surface grinding tape showing a second adhesive force which is larger than the first adhesive force to the resin layer over the resin layer, a process (c) to grind the rear surface of the semiconductor substrate, and a process (d) to peel the rear surface grinding tape from the semiconductor wafer and to peel also the resin layer in this timing together with the rear surface grinding tape. COPYRIGHT: (C)2004,JPO&NCIPI
申请公布号 JP2004273604(A) 申请公布日期 2004.09.30
申请号 JP20030059653 申请日期 2003.03.06
申请人 FUJITSU LTD 发明人 MATSUKI HIROHISA;IKUMO MASAMITSU;OKAMOTO HISAHIRO
分类号 H01L23/12;H01L21/02;H01L21/304;(IPC1-7):H01L23/12 主分类号 H01L23/12
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