POROUS FILM, COMPOSITION AND METHOD FOR FORMING THE SAME, INTERLAYER INSULATING FILM AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a coating liquid for forming a porous film which easily forms a thin film which has an optionally controlled film thickness and is excellent in dielectric and mechanical properties through a method used in an ordinary semiconductor process.

SOLUTION: The composition for forming the porous film contains an organic solvent and a condensate obtained by hydrolyzing and condensing at least one silane compound of the formula (1): R1kSi(OR2)4-kand at least one silicon-containing crosslinking agent of the formula (2): äXj(Y)3-jSi-(L)m-}nMZ4-nin the presence of a basic catalyst. A method, etc. for forming the porous film comprises an application step wherein the composition is applied, a subsequent drying step and a heating step wherein the dried coating film is hardened.

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