| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method which carries out maintenance-free and particle-free CVD and etching, controlling the deposition of reaction products to the wall surface of a reaction chamber etc. SOLUTION: A gas, containing a halogen compound gas, is used as a process gas in plasma etching. When etching a first inter-layer dielectric film 9, a XeF2 gas is used; when patterning a bit line 10 composed of a silicide film, a BrF3 is used; and when forming a storage node 12 composed of a polysilicon film, a BrCl gas is used. A non-volatile protective film is formed on a substrate surface via plasma, to make the figure of an opening proper. On the wall surface of the reaction chamber, to which an effect of plasma is very small, the deposition of the reaction product is controlled, by changing the deposition seed to a volatile substance(SiF4 etc). The same effect can be attained, if a halogen compound gas is used as an added gas to a main gas for carrying out CVD. COPYRIGHT: (C)2004,JPO&NCIPI
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