| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus by which short circuit between inter-wirings having a fine interval is prevented by suppressing the invasion of foreign matter into a lamination structure part in an Al alloy wiring, and to provide a method for manufacturing a semiconductor device, and the semiconductor device utilizing it. SOLUTION: An ashing chamber 11 includes gas supply systems 12 for O<SB>2</SB>, N<SB>2</SB>and H<SB>2</SB>O, respectively, related to an ashing process. The gas supply systems 12 are classified into H<SB>2</SB>O single supply and other gases supply, as gas supply control into at least the ashing chamber 11. A plasma ashing process is performed by the gas supplies limited in this way. H<SB>2</SB>O plasma is utilized as a corrosion countermeasure. On the other hand, it promotes the growth of the foreign matter so that an ashing process excluding H<SB>2</SB>O is provided. Thus, an ashing condition suppressing the growth of the foreign matter becomes possible. COPYRIGHT: (C)2004,JPO&NCIPI
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