| 摘要 |
PROBLEM TO BE SOLVED: To inhibit the occurrence of punch though due to short gate effects in a MOSFET. SOLUTION: A secondary gate electrode is formed on a sidewall insulating film that is formed on the side of a main gate electrode. By always applying a voltage on the secondary gate electrode, a channel is formed in a secondary gate region. When the voltage is applied on the main gate electrode, a channel is formed in the main gate region and combined with the channel in the secondary gate region. Then, a channel connecting a source region and a drain region is formed. Consequently, a drain current flows. Since the channel in the secondary gate region is shallow, the growth of a depletion layer is restrained. Consequently, the occurrence of a punch-through phenomenon is inhibited. COPYRIGHT: (C)2004,JPO&NCIPI
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