| 摘要 |
PROBLEM TO BE SOLVED: To realize a method for manufacturing a nitride semiconductor light emitting element capable of manufacturing it at a high yield. SOLUTION: The method comprises the steps of forming a semiconductor film on a substrate 1, forming a P-side electrode 10, for instance, on which an Au and Al are deposited one by one on the semiconductor film, depositing an insulating film 11, and removing the electrode 10 and the film 11 by a lift-off method. The GaN nitride semiconductor light emitting element stable for horizontal transverse mode and superior to mass-production can be realized. The silver color of the Al can be seen on the surface of the electrode 10 before the lift-off and the gold color of the Au can be seen after the lift-off. COPYRIGHT: (C)2004,JPO&NCIPI
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