| 摘要 |
A magnetoresistive random access memory is provided. The magnetoresistive random access memory includes a first magnetic layer of which the direction of a magnetic vector is fixed, a second magnetic layer which is positioned in parallel with the first magnetic layer and of which the direction of a magnetic vector is reversible, and a non-magnetic layer interposed between the first and second magnetic layers, the second magnetic layer having an aspect ratio of 2 or less, a thickness of 5 nm or less, and a saturation magnetization of 800 emu/cm<3 >or less. The magnetoresistive random access memory has kink-free, magneto-resistance characteristics, thereby exhibiting high selectivity regardless of process capability.
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