发明名称 Method and apparatus of evaluating layer matching deviation based on CAD information
摘要 An apparatus of evaluating a layer matching deviation based on CAD information of the invention, is provided with means for storing CAD data and a function of displaying to overlap a scanning microscope image of a pattern of a semiconductor device formed on a wafer and a design CAD image read from the storing means and a function of evaluating acceptability of formation of the pattern by displaying to overlap a pattern image of the semiconductor device formed on the wafer and the design CAD image of the pattern, in addition thereto, a function capable of evaluating acceptability of formation of the pattern also with regard to a shape and positional relationship with a pattern formed at a later step by displaying to overlap a design CAD image of the pattern formed at the later step.
申请公布号 US2004194042(A1) 申请公布日期 2004.09.30
申请号 US20040823104 申请日期 2004.04.13
申请人 SEIKO INSTR INC 发明人 MATSUOKA RYOICHI
分类号 H01L21/66;G03F7/20;G03F9/00;G06F17/50;G06T1/00;G06T3/00;G06T5/20;H01L21/027;(IPC1-7):G06F17/50 主分类号 H01L21/66
代理机构 代理人
主权项
地址