发明名称 |
Substrate for semiconductor light-emitting element, semiconductor light-emitting element and semiconductor light-emitting element fabrication method |
摘要 |
A group III nitride underlayer including at least Al, having a dislocation density of <=1X10<11>/cm<2 >and a (002) plane X-ray rocking curve half-width value of <=200 seconds is formed on a set base material. A p-type semiconductor layer group is formed above the group III nitride underlayer and includes a group III nitride in which the Ga content relative to the total group III elements is >=50% and in which a carrier density is >=1x10<16>/cm<3>. A light-emitting layer is formed on the p-type semiconductor layer group and includes plural mutually isolated insular crystals. An n-type semiconductor layer group is formed on the light-emitting layer and includes a Ga content relative to the total group III elements of >=50%.
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申请公布号 |
US2004188691(A1) |
申请公布日期 |
2004.09.30 |
申请号 |
US20040813565 |
申请日期 |
2004.03.30 |
申请人 |
NGK INSULATORS, LTD.;COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
HORI YUJI;ODA OSAMU;TANAKA MITSUHIRO;DAUDIN BRUNO;MONROY EVA |
分类号 |
C23C14/06;C23C16/34;H01L21/205;H01L33/00;H01L33/06;H01L33/32;(IPC1-7):H01L27/15;H01L31/12 |
主分类号 |
C23C14/06 |
代理机构 |
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代理人 |
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