发明名称 Method of integrating a porous dielectric in an integrated circuit device
摘要 The present invention is a method which provides flexibility and convenience in integration of porous dielectric materials without any substantial sacrifice in quality of the porous dielectric material formed during the process. This method enables one to create multilayer stacks that include embedded porous layers without having to remove the substrate being coated from the spin track between applications of the various layers and without deterioration in pore morphology in the porous layers.
申请公布号 US2004191417(A1) 申请公布日期 2004.09.30
申请号 US20030402103 申请日期 2003.03.28
申请人 YONTZ DORIE;HAHNFELD JERRY;LANDES BRIAN;LUCERO SEBRING;CASTILLO DANIEL;OUELLETTE KACEE B.;STOKICH THEODORE M. 发明人 YONTZ DORIE;HAHNFELD JERRY;LANDES BRIAN;LUCERO SEBRING;CASTILLO DANIEL;OUELLETTE KACEE B.;STOKICH THEODORE M.
分类号 H01L21/316;(IPC1-7):B05D3/02;B05D1/36 主分类号 H01L21/316
代理机构 代理人
主权项
地址