发明名称 |
Circuit for prevention of unintentional writing to a memory, and semiconductor device equipped with said circuit |
摘要 |
A circuit for prevention of unintentional writing to a memory prevents unintentional writing to a nonvolatile memory, after a recovery from a transitory power failure. The circuit includes a low-voltage detection circuit for detecting a power supply voltage drop depending on the state of a control signal for the detection circuit. A writing operation to the memory is prohibited depending on the control signal as well as upon an output signal of the low-voltage detection circuit.
|
申请公布号 |
US2004193817(A1) |
申请公布日期 |
2004.09.30 |
申请号 |
US20040809866 |
申请日期 |
2004.03.26 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
HOTAKA KAZUO |
分类号 |
G11C16/02;G06F11/00;G06F13/28;G06F15/78;G11C16/22;G11C16/34;(IPC1-7):G06F13/28 |
主分类号 |
G11C16/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|