发明名称 Circuit for prevention of unintentional writing to a memory, and semiconductor device equipped with said circuit
摘要 A circuit for prevention of unintentional writing to a memory prevents unintentional writing to a nonvolatile memory, after a recovery from a transitory power failure. The circuit includes a low-voltage detection circuit for detecting a power supply voltage drop depending on the state of a control signal for the detection circuit. A writing operation to the memory is prohibited depending on the control signal as well as upon an output signal of the low-voltage detection circuit.
申请公布号 US2004193817(A1) 申请公布日期 2004.09.30
申请号 US20040809866 申请日期 2004.03.26
申请人 SANYO ELECTRIC CO., LTD. 发明人 HOTAKA KAZUO
分类号 G11C16/02;G06F11/00;G06F13/28;G06F15/78;G11C16/22;G11C16/34;(IPC1-7):G06F13/28 主分类号 G11C16/02
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