发明名称 |
Semiconductor memory device |
摘要 |
A main control circuit generates a plurality of main control signals of different phases to local control circuits. The local control circuits produce row-related control signals greater in number than the main control signals in accordance with these main control signals. A semiconductor memory device can be easily adapted to change in bank structure, and can perform a fast and stable operation with a low current consumption
|
申请公布号 |
US2004190352(A1) |
申请公布日期 |
2004.09.30 |
申请号 |
US20040822717 |
申请日期 |
2004.04.13 |
申请人 |
RENESAS TECHNOLOGY CORP.;MITSUBISHI ELECTRIC ENGINEERING COMPANY LIMITED |
发明人 |
WATANABE NAOYA;NISHINO AIKO;DOSAKA KATSUMI |
分类号 |
G11C8/12;G11C11/406;G11C11/408;(IPC1-7):G11C7/00 |
主分类号 |
G11C8/12 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|