| 发明名称 |
Stacked gate flash memory device and method of fabricating the same |
| 摘要 |
A stacked gate flash memory device and method of fabricating the same. A cell of the stacked gate flash memory device in accordance with the invention is disposed in a cell trench within a substrate to achieve higher integration of memory cells.
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| 申请公布号 |
US2004188751(A1) |
申请公布日期 |
2004.09.30 |
| 申请号 |
US20040819464 |
申请日期 |
2004.04.06 |
| 申请人 |
NANYA TECHNOLOGY CORPORATION |
发明人 |
LIN CHI-HUI |
| 分类号 |
H01L21/265;H01L21/8247;H01L27/115;H01L29/423;H01L29/788;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/265 |
| 代理机构 |
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