Herstellungsverfahren einer Leistungshalbleiteranordnung und Leiterrahmen

摘要

Disclosed herein are a method of fabricating a power semiconductor device which is excellent in heat radiation of a power semiconductor chip and copes with improvement in function, increase in pin number and refinement in package of a control semiconductor chip, and a lead frame simplifying automation of assembling. Joiners (205) vertically extend from outer sides of leads (203, 204) of a tie bar (201) of a power circuit lead frame (20) respectively, while joiners (308) vertically extend from outer sides of leads (303, 307) of a tie bar (301) of a control circuit lead frame (30) respectively to be opposed thereto. Forward end portions (205a) of the joiners (205) are joined to rear surfaces of forward end portions (308a) of the joiners (308) at a device center portion.